Luminescence spectroscopy group

Group leader prof. habil. dr. Gintautas Tamulaitis

Tel.: + 370-52366071
Fax: + 370-52366070
E-mail:

Institute of Applied Research
Vilniaus University
Saulėtekio av. 9-III, 10222 Vilnius
Lithuania
Tel.: + 370-52366071
Fax: + 370-52366070
E-mail:

Topics

1. Experimental investigation and modeling of carrier dynamics in semiconductors and their nanostructures under high excitation level;
2. Optimization of the structure of nitride semiconductors and their nanostructures for optoelectronic applications;
3. Photoluminescence spectroscopy with high spatial resolution;
4. Enhancement of radiative recombination due to coupling with surface plasmons;
5. Study of semiconductor and oxide sctintillators for high energy physics experiments

Group members

 

Tel.

E-mail

Room  
Group leader:      
 
Prof. Gintautas Tamulaitis
Chief researcher

+370 5 2366071

703 Gintautas Tamulaitis copy
Researchers:        
Dr. Jūras Mickevičius
Senior researcher
+370 5 2366096 718
Jūras Mickevičius copy 
Dr. Darius Dobrovolskas
Researcher
+370 5 2366096 718 Darius Dobrovolskas
PhD students:        
Jonas Jurkevičius
+370 5 2366096 718 Jonas Jurkevičius
Dmitrij Ševčenko
+370 5 2366096 718 Dmitrij Ševčenko
Master students:        
Augustas Vaitkevičius
+370 5 2366096 718 Augustas Vaitkevičius
Bachelor students:        
Justinas Aleknavičius
     Justinas Aleknavičius
Mažena Mackoit
     Mažena Mackoit
Donatas Mažonas
    Donatas Mažonas 
Rokas Draugelis
     Rokas Draugelis

Collaboration

Dr. Roland Tamošiūnas, Dr. Arūnas Kadys, Dr. Tadas Malinauskas
Institute of Applied Research, Vilnius University
MOCVD growth of nitride epilayers and nanostructures, scanning electron microscopy

Prof. Edmundas Kuokštis
Institute of Applied Research, Vilnius University
Investigation of carrier dynamics in semiconductors and their nanostructures

Prof. Kęstutis Jarašiūnas
Institute of Applied Research, Vilnius University
Ultra-fast spectroscopy by light-induced transient grating and pump and probe techniques

Prof. Arūnas Krotkus
Department of Optoelectronics, Center for Physical Sciences and Technology
MBE growth of dilute bismide layers and nanostructures

Dr. Remigijus Juškėnas
Department of Characterization of Materials Structure, Center for Physical Sciences and Technology
Characterization of materials and structures using X-ray diffraction and transmission electron microscopy

Foreign collaboration:

Prof. M.S. Shur
Rensselaer Polytechnic Institute, Troy, NY
Wide-band-gap semiconductors, LEDs, high-power transistors

Dr. R. Gaska
Sensor Electronic Technology, Inc., Columbia, SC
Deep-UV LEDs

Prof. C.C. Yang
Department of Electrical Engineering, National Taiwan University, Taipei
Nanophotonics, plasmonics, display and lightning device technologies

Prof. S. Marcinkevičius
School of Information and Communication Technology, KTH, Stockholm
Wide-band-gap nitride semiconductors, LEDs, scanning near-field optical microscopy

Prof. M. Heuken
AIXTRON SE, Herzogenrath
MOCVD technology, LEDs

Dr. O. Sidlestkiy
Institute of Scintillation Materials of National Academy of Science of Ukraine, Kharkiv
Growth and study of scintillator crystals

Current projects

1. Global Grant "Improvement of light emission in III-nitrides by boron introduction to increase lattice matching", 2012-2015, project leader G. Tamulaitis;
2. The Research Council of Lithuania project "Enhancement of light emission efficiency in wide-band-gap nitride semiconductors", MIP-054/2012, 2012-2015, project leader J. Mickevičius;
3. COST action MP0805 "Novel Gain Materials and Devices Based on III-V-N Compounds", 2011-2014, member of the management committee: G. Tamulaitis;
4. COST action MP1302 „NanoSpectroscopy", 2013-2015, member of the management committee: G. Tamulaitis;
5. TEMPUS project "Development of Training Network for Improving Education in Energy Efficiency", 530379-TEMPUS-1-2012-1-LV-TEMPUS-JPCR; 2012 -2015, VU member of the management committee: G. Tamulaitis;
6. ES Structural Funds project „Development and characterization of materials prospective for semiconductor- and nanotechnologies and their study by steady and ultrafast spectroscopic techniques in a wide spectral range" (LAMETECH MOKSLAS), group members are participants of the project.

Recent publications

1. J. Mickevičius, J. Jurkevičius, K. Kazlauskas, A. Žukauskas, G. Tamulaitis, M. S. Shur, M. Shatalov, J. Yang, and R. Gaska, Stimulated emission in AlGaN/AlGaN quantum wells with different Al content, Appl. Phys. Lett. 100, 081902 (2012).
2. J. Mickevičius, J. Jurkevičius, K. Kazlauskas, A. Žukauskas, G. Tamulaitis, M. S. Shur, M. Shatalov, J. Yang, and R. Gaska, Stimulated emission due to localized and delocalized carriers in Al0.35Ga0.65N/Al0.49Ga0.51N quantum wells, Appl. Phys. Lett. 101, 041912 (2012).
3. J. Mickevičius, J. Jurkevičius, M. S. Shur, J. Yang, R. Gaska, and G. Tamulaitis, Photoluminescence efficiency droop and stimulated recombination in GaN epilayers, Opt. Express, 20, 25195-25200 (2012).
4. J. Mickevičius, G. Tamulaitis, M. Shur, M. Shatalov, J. Yang, and R. Gaska, Internal quantum efficiency in AlGaN with strong carrier localization, Appl. Phys. Lett. 101, 211902 (2012).
5. D. Dobrovolskas, J. Mickevičius, G. Tamulaitis, H. S. Chen, C. P. Chen, Y. L. Jung, Y. W. Kiang, C. C. Yang, Spatially resolved study of InGaN photoluminescence enhancement by single Ag nanoparticles, J. Phys. D: Appl. Phys. 46, 145105 (2013).
6. E. Gaubas, I. Brytavskyi, T. Čeponis, J. Kusakovskij, G. Tamulaitis, Barrier capacitance characteristics of CdS–Cu2S junction structures, Thin Solid Films, 531, 131-136 (2013).
7. N. G. Starzhinskiy, O. Ts. Sidletskiy, G. Tamulaitis, K. A. Katrunov, I. M. Zenya, Yu. V. Malyukin, O. V. Viagin, A. A. Masalov, and I. A. Rybalko, Improving of LSO(Ce) Scintillator Properties by Co-Doping, IEEE Trans. on Nucl. Sc., 60, 1427-1431 (2013).
8. D. Shevchenko, V. Gavryushin, J. Mickevičius, N. Starzhinskiy, I. Zenya, A. Zhukov, G. Tamulaitis, Emission properties of ZnSe scintillation crystals co-doped by oxygen and aluminum, J. Lumin. 143, 473-478 (2013).
9. J. Mickevičius, G. Tamulaitis, M. Shur, M. Shatalov, J. Yang, and R. Gaska, Correlation between carrier localization and efficiency droop in AlGaN epilayers, Appl. Phys. Lett. 103, 011906 (2013).
10. J. Mickevičius, D. Dobrovolskas, I. Šimonytė, G. Tamulaitis, C.-Y. Chen, C.-H. Liao, H.-S. Chen, and C. C. Yang, Unintentional annealing of the active layer in the growth of InGaN/GaN quantum well light-emitting diode structures, Phys. Status Solidi A 210, 1657-1662 (2013).
11. E. Gaubas, V. Borschak, I. Brytavskyi, T. Čeponis, D. Dobrovolskas, S. Juršėnas, J. Kusakovskij, V. Smyntyna, G. Tamulaitis, and A. Tekorius, Nonradiative and Radiative Recombination in CdS Polycrystalline Structures, Advances in Condensed Matter Physics, 917543, (2013)
12. D. Dobrovolskas, A. Vaitkevičius, J. Mickevičius, Ö. Tuna, C. Giesen, M. Heuken, G. Tamulaitis, Correlation between structure and photoluminescence properties in InGaN epilayers with thickness below and above critical thickness, J. Appl. Phys., 114, 163516 (2013)
13. T. Saxena, G. Tamulaitis, M. Shatalov, J. Yang, R. Gaska, and M. S. Shur, Low threshold for optical damage in AlGaN epilayers and heterostructures, J. Appl. Phys. 114, 203103 (2013).
14. J. Mickevičius, J. Jurkevičius, G. Tamulaitis, M. S. Shur, M. Shatalov, J. Yang, and R. Gaska, Influence of carrier localization on high-carrierdensity effects in AlGaN quantum wells, Optics Express, 22, A491 (2014)
15. D. Shevchenko, J. Mickevičius, N. Starzhinskiy, I. Zenya, A. Zhukov, G. Tamulaitis, Luminescence in ZnSe scintillation crystals co-doped with oxygen and aluminium, Nuclear Inst. and Methods in Physics Research A, 749, 14-18 (2014).
16. V. Kononets, D. Dobrovolskas, S. Neicheva, N. Starzhinsky, O. Sidletskiy, K. Lebbou, and G. Tamulaitis, Confocal Microscopy of Luminescence Inhomogeneity in LGSO:Ce Scintillator Crystal, IEEE Trans. on Nucl. Science, 61, 343 (2014).

Laboratories

Nanophotonics

Study of photoluminescence spatial distribution by confocal and scanning near-field optical microscopes in visual and near-infrared spectral range. Sample surface topography analysis by atomic force microscope (AFM).

 

Multifunctional microscopy system WITec
Alpha 300, CW He-Cd laser, laser diodes, VIS spectrometer UTS 300 with CCD camera, NIR spectrometer ANDOR SR303 with CCD camera.

 

  Nanofotonikos 

NIR spectroscopy

Luminescence measurements under CW and quasi-steady-state excitation state in near-infrared spectral range
(0.8–2.2 µm).

 

NIR spectrometer ANDOR SR303 with CCD camera.

 

 NIR spektroskopijos

Quasi-steady-state laser spectroscopy

Luminescence measurements under CW and quasi-steady-state excitation conditions and with nanosecond temporal resolution in UV-VIS spectral range at temperatures from 8 to 300 K.

 

Double monochromator HRD-1 with photomultiplier; spectrometer SR-500 with ICCD camera; closed-cycle helium cryostat, He-Cd laser, nanosecond Nd:YAG laser and with harmonics modules (up to the 5th), parametric light amplifier.

 

    Kvazinuostoviosios lazerinės spektroskopijos 1      Kvazinuostoviosios lazerinės spektroskopijos 2 

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